We consider a generalized switch model, which includes as special cases the model of multiuser data scheduling over a wireless medium, the input-queued cross-bar switch model, and a discrete time v
We consider a generalized switch model, which includes as special cases the model of multiuser data scheduling over a wireless medium, the input-queued cross-bar switch model, and a discrete time v
For the successful implementation of AI models it is necessary to understand not only benefits but also potential limitations and biases of machine learning.
InGaAsN-based materials are being developed at IQE, Inc. for 1.3 mum laser applications. Both MBE and MOCVD growth technology are employed and under investigation for commercial viability.
Large built-in electric filed have been predicted in the hexagonal III-nitride materials due to spontaneous and piezoelectric.
Using molecular beam epitaxy, we have studied growth of GaAs on epitaxial CoSi sub 2 films on Si(111) substrates.
The MBE growth and energy levels of GaAs - (Al,Ga) AS quantum well structures with half-parabola and two-stepped square composition profiles are described.
We have used molecular beam epitaxy to grow Ca sub x Sr sub (1-x) F sub 2 films of various thicknesses on GaAs substrates with different orientations, i.e., (100), (111)A, (511)A, (511)B, (711)A an
In this paper we first describe the growth of device quality compositionally graded quaternary Al sub (x) Ga sub (y) In sub (1-x-y) As on InP by Molecular Beam Epitaxy (MBE).
HgCdTe has been the material of choice for detectors in the atmospheric transmission windows at 5 and 10 microns.
