We discuss the use of Admittance Spectroscopy to measure the band offsets of semiconductor heterojunctions.
The application of the photoluminescence technique to measure indium in In(x)Ga(1-x)As semi-insulating, low dislocation density GaAs crystals for x 0.02 is investigated.
The study described in this paper shows that the Owen bridge is well adapted to the accurate measurement of inductance and effective resistance to above 3,000 cycles.
Ion implantation of quantum wells can enhance interdiffusion of the layers upon thermal annealing.
We propose and demonstrate a simple and accurate method to measure the Kerr nonlinearity coefficient of optical fibres.
It is essential to know the transmission loss caused by misalignment of the fiber ends in designing fiber connectors and splices.
A brief review of the theory necessary for an understanding of the magnetic properties is given.
A brief review of the theory necessary for an understanding of the magnetic properties is given.
Electro-reflectance spectroscopy has been used to identify the formation of minibands resulting from the superlattice-induced formation of a Kronig-Penney like superlattice whose period is similar
Van der Pauw test structures for the measurement of N-well sheet resistance under p+ diffusion and under p channel gate for CMOS technologies on p substrates are presented
