Publications

Displaying 20951 - 20960 of 37748

Modes in a Sequence of Thick Astigmatic Lens-Like Focusers

One possible long distance transmission medium for optical waves consists of a periodic sequence of converging lenses.

Modes of Motion in Quartz Crystals, the Effects of Coupling and Methods of Design

ITH the recent extended use of Quartz crystals in oscillators and electrical networks has come a need for a comprehensive view of the various types of crystal cuts.

Modification of Cu-H bonding near a Ru(001)surface.

Surface Linearized Augmented Plane Wave (SLAPW) total energy calculations are used to study the differences between Cu-H bonding on Cu(111) and on a pseudomorphic Cu monolayer on - a Ru(0001) subst

Modification of silicon properties with lasers, electron beams and incoherent light.

Direct energy sources such as lasers and electron beams permit spatially localized alteration of semiconductor microstructure and electrical properties.

Modification of the fermi-surface instability in UPt(3) by Th substitution.

The magnetic susceptibility, specific heat, and electrical resistance of U(1-x)Th(x)Pt(3) have been studied for x between 0.01 and 0.10 at temperatures between 1.5 and 20K.

Modification of the Post-Curing Behavior of Siloxane Networks

Siloxane networks formed by the vinyl-addition curing mechanism often contain excess silane groups to improve the curing kinetics.

Modification of transition metal electronic structure by P, S, C1, and Li adatoms.

We have evaluated the electronic perturbations induced on a thin Rh (001) film by the adsorption of 1/4 monolayer coverages of P, S, C1 or Li atoms.

Modified Euclidean algorithm block for high-speed Reed-Solomon decoder

A new modified Euclidean (ME) algorithm block for the highspeed Reed-Solomon (RS) decoder is presented.

Modified Minkowski fractal patch antenna for multiband GPS receiver

The object of the study was the antenna of fractal geometry for GPS portable terminal. To make an objective assessment of the designed antennas the network and field parameters were determined.

Modified Photoresist Etch Mask Process for InP Channelled Substrate Lasers

We develop a new photoresist etch mask process to etch (001) InP wafers to obtain (111) B-faceted V-grooves for channelled substrate laser applications.