The aim here is to report on the supershot noise behaviour of substrate current generated by impact ionization in submicron n-channel enhancement mode MOSFETs and isolate the noise mechanism respon
The noise manifested by impact-ionization-generated substrate current in fine-line NMOS transistors is studied.
We demonstrate that soliton perturbation theory, though widely used, predicts an incorrect phase distribution for solitons of stochastically driven nonlinear SchrÄodinger equations in physically re
The GaAs metal-semiconductor field effect transistor ( M E S F E T ) originally designed for microwave applications has become an important component of lightwave receivers used in communication ap
Noise characteristics of the three U.S. x-ray synchrotron sources are compared in the 0 - 2.5 KHz region.
For the first time, total NF below the phase-insensitive quantum limit of two cascaded non-degenerate in-line fiber parametric amplifiers without idler removal has been measured. About 1.
An analysis of the noise figure spectral distribution in erbium- doped fiber amplifiers is presented.
Neutron damage centers in the depletion region between the gates and channel of a JFET fluctuate in charge and modulate the drain current. Thus, they create noise.
In the course of designing FM systems, intermodulation noise is an important factor which deserves special attention.
The noise figure of a dual-pumped parametric amplifier with co-polarized pumps is quantified, for the first time to our knowledge.
