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Helix waveguide composed of closely wound insulated copper wire covered with a jacket of dielectric material and surrounded by a coaxial metallic shield is a good transmission medium for circular e

Double crystal rocking curves for an InP/InGaAsP/InP double heterostructure grown by hydride vapor phase epitaxy have been obtained which reveal fringes corresponding to both the top InP layer and

When chemists cannot quantify the concentration in a field sample, they report nondetect instead of a numerical measurement (a detect).

Symbolic manipulation of sparse polynomials, given as lists of exponents and nonzero coefficients, appears to be much more complicated than dealing with polynomials in dense encoding (see e.g.

The dynamics of the random field Ising model quenched to low temperatures are studied with use of a continuum interface model.

Experiments and calculations are used to illustrate the role of nonequilibrium electron transport in determining the performance of InP/In sub (0.53) Ga sub (0.47) As heterostructure bipolar transi

Reducing length scales in n-p-n heterojunction bipolar transistors leads to changes in both the mode of operation and the fundamental limits ro device performance.

Reducing length scales in n-p-n heterojunction bipolar transistors leads to changes in both the mode of operation and the fundamental limits to device performance.

We demonstrate the existence of a nonequilibrium electron-hole- plasma in the semiconductor GaAs under the influence of high electric fields.

We calculate the energy loss rate of a quasi-2D hot-electron gas at a semiconductor heterojunction due to the emission and reabsorption of nonequilibrium optical phonons.