Main content
Displaying 22951 - 22960 of 37730

Single-layer longitudinal and Hall resistances have been measured in a bilayer two-dimensional electron system at v(T) = I with equal but oppositely directed currents flowing in the two layers.

Observations of the 3(12)-2(11) and 3(13)-2(12) transitions of ortho and the 3(03)-2(02) transitions of para H2CS were made with the Onsala and AT&T Bell Laboratories telescopes.

We report the results of tilted magnetic field experiments on three high quality wide GaAs quantum wells, with particular emphasis on the N >= 1 Landau levels.

We have searched for microwave background inhomogeneities near the gravitational lens candidate 1146+111B,C.

A novel low energy electron diffraction (LEED) system has been used to record the peak intensities and angular profiles of LEED beams from Cu3Au(001) surface.

The first direct observation of the melting transition of a uniformly flat (20A) Pb film is reported. The transition was observed by TEM using dark field imaging.

We report the observation of reflection high-energy electron diffraction (RHEED) intensity oscillations during the growth of GaAs using triethylgallium in chemical beam epitaxy (CBE).

AT&T has recently established a low temperature co-fired tape facility to explore the potential of this relatively new technology.

I T H the increasing demands of the radio industry for a high degree of carrier-frequency stability, considerable attention has been focused recently on the piezo-electric quartz crystal as a circu

We experimentally demonstrate a self-healing network using monitoring information to reconfigure faulty links through SDN