Publications

Double heterostructures consisting of InAs(0.91)Sb(0.09) active layers with Al(0.5)Ga(0.5)Sb cladding layers were grown by molecular beam epitaxy on GaSb substrates.

Double heterostructures consisting of GaSb active layers with Al(0.4)Ga(0.6)Sb cladding layers were grown by molecular beam hetero-epitaxy on Si substrates.

Double heterostructure lasers consisting of GaSb active layers with Al(0.4)Ga(0.6)Sb cladding layers were grown by molecular beam hetero-epitaxy on Si substrates.

We report the first demonstration of optically pumped mixing using a monolithically integrated photonic chip.

The Knight shift and the nuclear spin-lattice relaxation rate 1/T-1 of Ga-71 nuclei are measured in GaAs quantum wells at Landau level filling factor nu = 1/2 using optically Dumped NMR.

Various circuits dedicated tohigh spectral purity signal transmission using fiber optics are presented.

We report on an optically powered optical power limiter for use in lightwave networks.

When illuminated by ultrashort optical pulses, large aperture planar photoconductors are shown to radiate a directional electromagnetic pulse which can be steered by varying the angle of incidence

The experimental electronic switching system uses as its large, semipermanent memory a flying spot store which has been developed to meet the needs of the system.* The flying spot store holds the t

I argue that optics can reduce the energy for irreversible communication of logic signals inside digital switching and processing machines.