Publications

We report on the reliability of InP HBT technology which has applications in very high-speed ICs.

Rapid growth in the use of the Internet and network-connected PCs has spurred network usage drastically in the last few years.

Epitaxial YSi sub (2-x) films have been fabricated.

We have prepared new polymetric materials, 1 and 2, by linking highly dipolar monomer units in a head-to-tail manner.

As the physical dimensions of VLSI devices become smaller, the necessary scaling of capacitor structures leads to reduction in the thickness of the dielectric layer to achieve the required capacit

New microlithography technology evolves towards use of short wavelength UV radiation, which requires from new resist materials to combine high UV transparency with dry etch stability.

Size-selected Si sub(10) clusters have been deposited on a clean Au(001)-(5x20) surface and imaged using a scanning tunneling microscope in UHV.

There is no doubt that lithium niobate will be the prime material for first generation active and passive integrated optical devices.

While many important milestones have been reached in the technological development of high-temperature superconductivity, the field is still in its infancy, and optimal routes for preparation and

The system used to deposit samples was developed at MIT by T. J. Donahue, W. R. Burger and R.