High mobility two-dimensional electron systems in GaN/AlGaN heterostructures have been realized by plasma assisted molecular beam epitaxy on GaN templates.
Narrow MOSFET channels are investigated as quasi-one-dimensional electron systems containing a small number of electrons.
We have observed the Aharonov-Bohm effect in the magnetoresistance of doubly connected geometries fabricated in high mobility GaAs/AlGaAs heterostructures.
Quantum well infrared photodetectors (QWIP) are good candidates for low photon flux detection in the 12-20 mu m range.
We report on the study of the electrical current flowing through weakly coupled superlattice structures under an applied electric field and at very low temperature, i.e., in the tunneling regime.
By considering the utilization of a classical channel without quantum entanglement, fidelity F sub classical = 1/2 has been established as setting the boundary between classical and quantum domains
We have achieved avalanche gain at a wavelength of 10.3microns in Al sub x Ga sub 1-x As/GaAs quantum well superlattices.
We report results on the effect of a nonsharp and disordered potential in quantum well infrared photodetectors (QWIP).
We demonstrate quantum well tri-state logic devices for possible use in optical bus architectures.
Recent developments in quantum well structures grown by molecular beam epitaxy will be described, with emphasis on systems with new optical and electronic properties.
