BCl3+ CHF3 gas mixture for reactive ion etching process was used to the gate-recess of fabricating (Al0.3Ga0.7)(0.5)In0.5P quaternary heterostructure double doped-channel FET's (D-DCFET), where a h
A reactive ion etching process, which planarizes the silicon dioxide film deposited over steps in AlCu conductor patterns, has been developed for wide gap magnetic bubble devices.
At LANL, we have undertaken a research program to determine whether Linux and/or Plan 9 can be used to realize the benefits of light-weight kernels while maintaining the benefits of a full-featured
In most experiments on the Casimir force the comparison between measurement data and theory was done using the concept of the root-mean-square deviation, a procedure that has been criticized in the
We present a rigorous derivation of coupled mode equations for the grating-assisted coupling of short, co-propagating pulses.
Internet connected devices are becoming increasingly common in consumer homes. These devices combined with software entities are used to build Internet of Things (IoT) applications.
The notion of distillable entanglement is one of the fundamental concepts of quantum information theory.
Next generation wireless networks will rely heavily on packet transport for both data and voice services.
We demonstrate that using a broadband, first order, and coherent pump laser enables effective and efficient forward-pumped distributed Raman amplification for long-haul transmission systems, thanks
Pump-to-signal relative-intensity-noise (RIN) transfer in a forward-pumped Raman amplifier using polarization-combined diodes is measured and analyzed.
