We have studied cross-sectioned n- and p-metal-oxide-semiconductor field effect transistors with gate lengths approaching 60 nm using a scanning capacitance microscope (SCM).
We have studied cross-sectioned n- and p-metal-oxide-semiconductor field effect transistors with gate lengths approaching 60 nm using a scanning capacitance microscope (SCM).
By combining electron probing with current biasing at low temperatures a map of the transport characteristics of a mixed phase thin film superconductor can be obtained.
Scanning Kelvin force microscopy is applied to study the charge nature of threading dislocations on GaN surface.
Scanning Kelvin force microscopy is applied to study the charge nature of threading dislocations on GaN surface.
The construction and operation of a scanning positron microbeam is reported.
Surface charge on insulating samples can be a significant source of error for scanning probe microscopes.
A review is presented of the basic operating principles of scanning tunneling microscopy and spectroscopy.
We report a scanning tunneling microscopy (STM) study of the surface of a TTF-TCNQ crystal.
The proximity induced excitation spectrum of thin gold layers on superconducting NbSe2 (S) has been measured as a function of gold thickness with a low temperature scanning tunneling microscope.
