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We present an approach to real time direct aerial image monitoring which utilizes the information contained in an alignment signal generated by scanning the image of a mask grating over a correspon

Parametric image-forming models were used to demonstrate the imaging of potential mask defects over ranges of descriptive parameters, either isolated or coincident with a critical object.

The variety of processes responsible for the charging of a free-standing dielectric film irradiated by the energetic electrons are discussed and the corresponding rates are evaluated.

The performance of integrated circuits has been improving steadily for the past three decades.

This paper presents the Open-Circuit Deadlock (OCD), a new scan cell primitive that allows fully flexible and scalable securization of JTAG target, from the cell to the system level.

Surface charge on insulating samples can be a significant source of error for scanning probe microscopes.

Scanning tunneling microscopes (STM) were the first types of SPM to be widely used (1-3).

This paper reports results on application of scanning acoustic microscopy (SAM) for analysis of high-density microassembling technologies such as BGA and TSV.

We have studied cross-sectioned n- and p-metal-oxide-semiconductor field effect transistors with gate lengths approaching 60 nm using a scanning capacitance microscope (SCM).

We have studied cross-sectioned n- and p-metal-oxide-semiconductor field effect transistors with gate lengths approaching 60 nm using a scanning capacitance microscope (SCM).

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