In vector four-wave mixing, one or two strong pump waves drive two weak signal and idler waves, each of which has two polarization components.
Photoreflectance (PR) and Raman spectra were employed to investigate the interfacial characteristics of a series of oxide films on GaAs.
The formation of metal-p(+)-n structures represents one of the methods utilized for enhancing the height of Schottky barriers on semiconductors whose normal barrier height is inadequate in device a
Current transport and Schottky barrier height analysis on InAlN/GaN structures with thermally oxidized InAlN surface (800 degrees C, 1 min) was performed.
Simple physical considerations of local charge neutrality suggest that near a metal-semiconductor interface, the Fermi level in the semiconductor is pinned near an effective gap center, which is si
Capacitance and current characteristics at single crystal silicide- silicon interfaces are studied.
Schottky barrier diodes can be used for fast and efficient photodetectors if the incident light is coupled into the depletion layer of the diode and if electron-hole pairs are created by the intern
The receiver modulator of the TD-3 repeater is the first unit in the signal path which uses active devices.
A gain-guide AlGaAs double heterostructure laser which employs a Schottky barrier in conjunction with a p-GaAs etched mesa contact for current isolation has been fabricated.
Simple, self-aligned phase-coupled laser arrays have been prepared using Schottky barrier current confinement.
