Publications

The formation of metal-p(+)-n structures represents one of the methods utilized for enhancing the height of Schottky barriers on semiconductors whose normal barrier height is inadequate in device a

Current transport and Schottky barrier height analysis on InAlN/GaN structures with thermally oxidized InAlN surface (800 degrees C, 1 min) was performed.

Simple physical considerations of local charge neutrality suggest that near a metal-semiconductor interface, the Fermi level in the semiconductor is pinned near an effective gap center, which is si

Capacitance and current characteristics at single crystal silicide- silicon interfaces are studied.

Schottky barrier diodes can be used for fast and efficient photodetectors if the incident light is coupled into the depletion layer of the diode and if electron-hole pairs are created by the intern

The receiver modulator of the TD-3 repeater is the first unit in the signal path which uses active devices.

A gain-guide AlGaAs double heterostructure laser which employs a Schottky barrier in conjunction with a p-GaAs etched mesa contact for current isolation has been fabricated.

Simple, self-aligned phase-coupled laser arrays have been prepared using Schottky barrier current confinement.

A new type of a simple gain-guided GaAlAs laser using a Schottky barrier restriction (SBR) technique is presented.

We model the effects of cross-phase modulation in frequency/wavelength division multiplexed optical communications systems, using a Schrodinger equation with spatialy and temporally random potentia