The authors proposed a selective assign shortest path first (SASPF) algorithm for routing and wavelength assignment in the presence of four wave mixing (FWM) in wavelength division multiplexing net
The present paper has its inception in the need of a correct understanding of the behavior of selective circuits when subjected to irregular and random interference, and of devising a practically u
Electronic Mach-Zehnder interferometers in the quantum Hall (QH) regime are currently discussed for the realization of quantum information schemes.
Selective etching of GaAs over AlGaAs and InGaP was examined in different plasma chemistries (BCl3/SF6, BCl3/NF3, IBr, ICI, BI3, and BBr3) in a high density plasma reactor.
Step coverage of sputtered aluminum metallization presents a problem when the contact window aspect ratio (height/diameter) becomes greater than one. As a result, window plugs are of interest.
During the past few years, studies of microwave propagation have been made by the Radio Research group at the Holmdel Laboratory over two paths located in eastern New Jersey.
Tungsten (W) films have been selectively deposited (i.e., deposited on Si and TaSi2 to the exclusion of SiO2) by low pressure chemical vapor deposition via the reduction of WF6 by either Si or H2.
This study assesses the use of selective LPCVD W as a contact barrier in VLSI circuits.
The selective growth of InP on Si0(2) masked substrates is demonstrated using metal-organic chemical vapor deposition.
Molybdenum films have been deposited by Low Pressure Chemical Vapor Deposition (LPCVD) on patterned silicon substrates by the reduction of molybdenum hexafluoride in hydrogen and argon atmospheres.
