Real-time periodic transmission across packet switched networks that experience stochastic-delays requires clock recovery at the destination.
A scheme is proposed for attaching IC chips to a host silicon interconnection substrate which has the combined features of self-alignment and controlled solder collapse.
This work describes a self-aligned Schottky-gate field-effect transistor (FET) which uses the delta - doping technique during crystal growth by molecular-beam epitaxy.
Pn junction diodes have been defined in epitaxially grown InP layers with 3He+ bombardment.
The development of a self-aligned fabrication process for small emitter contact area (2, x 4 mum(2)) GaN/AlGaN heterojunction bipolar transistors and GaN bipolar junction transistors is described.
We demonstrate an approach for fabricating nanometer-scale devices with minimal device areas while still retaining compatibility with integrated metal wiring.
Propagation theory is developed to get analytic expressions for both guided and diffusely scattered 3-D fields in common indoor environments, with access points (APs) placed along a hallway and mob
We consider propagation of optical pulses in the anomalously dispersive region of single-mode fibers after including the effects of Kerr-type nonlinearity.
In this paper, we report the syntheses and characterizations of a number of poly(phenylene vinylene) derivatives substituted with dendritic sidechains and their self-assemble properties.
The structure of Ge nanocrystals (NC) grown on BaTiO(3) (BTO)/SrTiO(3)/Si(001) is studied by high resolution transmission electron microscopy.
