Publications

This work describes a self-aligned Schottky-gate field-effect transistor (FET) which uses the delta - doping technique during crystal growth by molecular-beam epitaxy.

Pn junction diodes have been defined in epitaxially grown InP layers with 3He+ bombardment.

The development of a self-aligned fabrication process for small emitter contact area (2, x 4 mum(2)) GaN/AlGaN heterojunction bipolar transistors and GaN bipolar junction transistors is described.

We demonstrate an approach for fabricating nanometer-scale devices with minimal device areas while still retaining compatibility with integrated metal wiring.

Propagation theory is developed to get analytic expressions for both guided and diffusely scattered 3-D fields in common indoor environments, with access points (APs) placed along a hallway and mob

We consider propagation of optical pulses in the anomalously dispersive region of single-mode fibers after including the effects of Kerr-type nonlinearity.

In this paper, we report the syntheses and characterizations of a number of poly(phenylene vinylene) derivatives substituted with dendritic sidechains and their self-assemble properties.

The structure of Ge nanocrystals (NC) grown on BaTiO(3) (BTO)/SrTiO(3)/Si(001) is studied by high resolution transmission electron microscopy.

The use of individual molecules as functional electronic devices was proposed in 1974 and advances in the field of nanotechnology have led to various measurements of electrical properties on the mo

The use of individual molecules as functional electronic devices was proposed in 1974 and advances in the field of nanotechnology have led to various measurements of electrical properties on the mo