Modern materials technology is largely based on the modification and control of the surface and interface region of solids.
Modern materials technology is largely based on the modification and control of the surface and interface region of solids.
The talk will discuss observations on single-crystal semiconductor films grown epitaxially on lattice mismatched substrates, a technique for creating novel elastically-strained layers and superlatt
In reccnt years semiconductor p-n junctions have found wide use in parametric amplifiers, harmonic generators, and frequency modulators.
For high speed TDM optical links, high speed physical layer electronics provides critical interface between the local electronic data traffic and high speed optoelectronic devices.
An overview of the semiconductor active devices available for 100-GHz and 100-Gb/s applications is given, based on semiconductor properties and device requirements.
We experimentally demonstrate an integrated semiconductor source of counterpropagating twin photons in the telecom range.
We have successfully fabricated FETs with In sub 0.53 Ga sub 0.47 As channels, lattice-matched In sub 0.52 Al 0.48 sub As gate barriers, and n+ In sub 0.53 Ga sub 0.47 As gates.
Preface: When American Indians transmitted messages by means of smoke signals they were exploiting concepts at the heart of modern optical communications.
Preface: When American Indians transmitted messages by means of smoke signals they were exploiting concepts at the heart of modern optical communications.
