Publications

This paper gives an overview of SGRED, a third generation connectivity based symbolic layout editor for integrated circuits.

In emerging smart grid networks, massive amounts of data will be continuously generated from measurement devices embedded in the power grid such as phasor management units (PMUs), intelligent elect

We consider a general parallel server system model with multiple customer classes and several flexible multiserver pools, in the many-server asymptotic regime where the input rates and server pool

We consider a shadow routing based approach to the problem of real-time adaptive placement of virtual machines (VM) to large data centers (DC) in a network cloud.

Fast state-of-polarization transients induced by disturbances of the transmission fiber can cause errors and may indicate an imminent fiber break.

In n-doped GaAs/AlGaAs quantum wells in a magnetic field normal to the interface plane, we measured the spectra of optical emission due to transitions from electron to hole levels for polarizations

Hydrogen plasma exposure of silicon doped Gal-xAlxAs epilayers with x 0.37 causes a strong reduction of the free electron concentration in the layers.

We describe, in separate sections, contact resistance, reverse bias diode leakage and physical analysis (SIMS, TEM and RBS) data from shallow n sup + /p junctions made by implanting various doses o

We describe, in separate sections, contact resistance, reverse bias diode leakage and physical analysis (SIMS and TEM) data from shallow P sup + /n junctions made by implanting various doses of BF

Be is implanted into MOCVD grown n-InGaAs. Both electrical and atomic profiles indicate that Be In-diffusion occurs during annealing resulting in a p layer thicker than that desired.