We describe, in separate sections, contact resistance, reverse bias diode leakage and physical analysis (SIMS and TEM) data from shallow P sup + /n junctions made by implanting various doses of BF
Be is implanted into MOCVD grown n-InGaAs. Both electrical and atomic profiles indicate that Be In-diffusion occurs during annealing resulting in a p layer thicker than that desired.
We report results on shallow silicided (CoSi sub 2) diodes. The blanket LPCVD W process utilizing hydrogen reduction of WF sub 6 was used to form contacts to these diodes.
The purpose of device isolation is to isolate one electrically active region from the other. The performance of isolation is measured by the leakage current between the two regions.
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We propose a new framework, based on predicate abstraction and model checking, for shape analysis of programs.
Shapes play an important role in many human activities, but are rarely seen in their natural form as raw and unanalyzed.
Modifications of the shapes and relative orientations of contact windows in attenuated phase shifting mask are studied theoretically and experimentally to maximize process latitude and resolution a
In many proposed applications, robots are required to recognize a relatively small number of object types, each well-defined by shape.
The effect of sidewall nucleation on nanowire morphology is studied theoretically.
