There are now several different layered cuprate structures or systems which exhibit high temperature superconductivity.
Microfluidic cooling technologies for future electronic and photonic microsystems require more efficient flow configurations to improve heat transfer without a hydrodynamic penalty.
Samples of Marlex 50 crystallized from dilute solution (yielding single crystals) and in the bullfc form were irradiated by high-energy electrons and. the solubilities compared.
It was shown in the preceding paper 1 that polyethylenes crystallized from the melt and from dilute solution were affected differently by electron irradiation, the former becoming insoluble at much
The discovery of the role of nonradiative recombination in limiting the useful life of semiconductor lasers has changed the methodology of device 'burn-in' testing and the principles of materials d
The operation of a semiconductor device depends on the controlled movement of charge in response to externally applied potentials.
When CdTe is grown by molecular beam or organometallic vapor phase epitaxy on (100) GaAs, the layer can grow with either a (100) or (111) orientation.
Buried oxide layers, for silicon on insulator (SOI) structures, have been formed by high-dose oxygen implantation into silicon. Float-zone (100) wafers were implanted in the dose range 0.
The influence of isothermal hydrogen annealing on electrical properties of LPCVD boron implanted polysilicon films at various annealing temperatures from 330C to 500C has been reported.
Vibrational energy harvesters offer an alternative to batteries for the autonomous powering of low power electronic devices, such as wireless sensors.
