Publications

Samples of Marlex 50 crystallized from dilute solution (yielding single crystals) and in the bullfc form were irradiated by high-energy electrons and. the solubilities compared.

It was shown in the preceding paper 1 that polyethylenes crystallized from the melt and from dilute solution were affected differently by electron irradiation, the former becoming insoluble at much

The discovery of the role of nonradiative recombination in limiting the useful life of semiconductor lasers has changed the methodology of device 'burn-in' testing and the principles of materials d

The operation of a semiconductor device depends on the controlled movement of charge in response to externally applied potentials.

When CdTe is grown by molecular beam or organometallic vapor phase epitaxy on (100) GaAs, the layer can grow with either a (100) or (111) orientation.

Buried oxide layers, for silicon on insulator (SOI) structures, have been formed by high-dose oxygen implantation into silicon. Float-zone (100) wafers were implanted in the dose range 0.

The influence of isothermal hydrogen annealing on electrical properties of LPCVD boron implanted polysilicon films at various annealing temperatures from 330C to 500C has been reported.

Vibrational energy harvesters offer an alternative to batteries for the autonomous powering of low power electronic devices, such as wireless sensors.

We study the $k$-Canadian Traveller Problem, where the objective is to lead a traveller in an undirected weighted graph $G$ from a source $s$ to a target $t$, knowing that at most $k$ edges of the

There is an increasing number of chip carrier package such as ball grid arrays (BGA) and chip scale packages (CSP) that use electroless nickel/immersion gold (ENi/IAu) as a surface finish.