This paper seeks to demonstrate the performance of a thermoelectric energy recovery module (TERM).
Changes in the electronic properties of bulk GaAs crystals, grown from melts of varied As:Ga ratios, and Si-donor concentrations, were investigated by annealing in the temperature range 850C to 1
Silica glasses of a same composition with different annealing times above and below T-g are characterized by infra-red and Raman spectroscopy in order to determine their fictive temperature.
A first simple, 3-D thermal model is developed to determine the temperature rise and the voltage build-up of VLSI devices subject to the electrical stress of Human-Body Model (HBM) electrostatic di
A three-dimensional thermal model is developed to determine the temperature rise and the voltage build-up of VLSI devices stressed by Human-Body Model (HBM) electrostatic discharges (ESD).
The facet temperature profile and the thermal resistance of operating quantum-cascade lasers (QCLs) have been assessed using a microprobe band-to-band photoluminescence technique.
A computational and experimental study was undertaken to characterize the thermal performance of a 244 lead Hybrid Integrated Circuit (HIC) mounted on a glass epoxy printed wiring board (PWB).
A thermal technique to determine the volume fraction of interfacial material in microphase-separated block copolymers is described.
Precise temperature knowledge is a key parameter to estimate the performances and predict the reliability of semiconductor devices.
Polyimides exhibit high thermal stability, chemical resistance to most organic solvents and etchants used electronic processing, and low dielectric properties.
