Publications

An aluminum film is deposited on the fivefold-symmetric surface of icosahedral Al-Pd-Mn quasicrystal.

Epitaxial growth of single-crystal gadolinium oxide dielectric thin films on gallium arsenide is reported.

We use numerical simulation to investigate and analyze the way that rigid disks and spheres arrange themselves when compressed next to incommensurate substrates.

LaTiOx films have been grown on (001) perovskite oxide substrates by pulsed-laser deposition.

Aluminum gallium nitride alloys were grown by molecular-beam epitaxy and their film composition, structure and microstructure were investigated by Rutherford backscattering spectroscopy, atomic for

This paper reviews epitaxial growth techniques and their application to the fabrication of optoelectronic devices based on III-V compound semiconductors used in optical fiber based communication sy

Epitaxial Growth of Au on Ni(110) has been studied by Scanning Tunneling Microscopy (STM). Equilibrium overlayer was obtained by surface segregation of dilute Ni(110) alloy.

We report the synthesis of 1 mu m thick single crystalline aluminum nitride films by dc magnetron sputtering on AlGaN/GaN layer grown on sapphire substrate at low temperature (substrate temperature

Future generations of integrated circuits will feature heterostructures such as GaAs on Si, so that optoelectronic devices can be integrated onto Si.

This work presents a study of the epitaxial growth of Ge on Si (111) using a Gd2O3 crystalline template.