Publications

Hybrid integration of III-V materials onto silicon by wafer bonding technique is one of the mature and promising approaches to develop advanced photonic integrated devices into the Silicon Photonic

We report the first demonstration of metal-semiconductor field effect transistors (MESFETs) made from GaAs structures grown with an alkylarsine source, tertiarybutylarsine (t-BuAsH sub 2).

Epitaxial growth of ordered, single-crystalline superlattices is often limited by the lattice mismatch between the constituent elements or alloys.

We report the first low temperature MOCVD growth of Hg(1-x)Cd (x)Te using a thermal pre-cracking technique.

We report the first epitaxial semiconductor-insulator-semiconductor (SIS) double heterostructures using III-V compound semiconductor InP.

Recent development of epitaxial silicide technology has allowed structurally perfect metal-semiconductor interfaces to be fabricated.

Thin films of YBa sub 2 Cu sub 3 O sub (7-delta) grown on 001>- oriented SrTiO sub 3 substrates attain zero resistance at a temperature of T=92K and have a superconducting critical current, j su

Diffusion and interfacial segregation phenomena occurring in the Si amorphous-crystal system under MeV Ar ion irradiation are reviewed.

The use of epitaxial structures for the generation, detection, and modulation of modulation of light has had as its strongest driving force the development of fiber optic communications systems.

The need for low-resistance, shallow contacts in Si-based microelectronic devices has driven the search for fabrication techniques of epitaxial silicides which are compatible with the manufacturing