This paper reviews epitaxial growth techniques and their application to the fabrication of optoelectronic devices based on III-V compound semiconductors used in optical fiber based communication sy
Epitaxial Growth of Au on Ni(110) has been studied by Scanning Tunneling Microscopy (STM). Equilibrium overlayer was obtained by surface segregation of dilute Ni(110) alloy.
We report the synthesis of 1 mu m thick single crystalline aluminum nitride films by dc magnetron sputtering on AlGaN/GaN layer grown on sapphire substrate at low temperature (substrate temperature
Future generations of integrated circuits will feature heterostructures such as GaAs on Si, so that optoelectronic devices can be integrated onto Si.
This work presents a study of the epitaxial growth of Ge on Si (111) using a Gd2O3 crystalline template.
Hybrid integration of III-V materials onto silicon by wafer bonding technique is one of the mature and promising approaches to develop advanced photonic integrated devices into the Silicon Photonic
We report the first demonstration of metal-semiconductor field effect transistors (MESFETs) made from GaAs structures grown with an alkylarsine source, tertiarybutylarsine (t-BuAsH sub 2).
Epitaxial growth of ordered, single-crystalline superlattices is often limited by the lattice mismatch between the constituent elements or alloys.
We report the first low temperature MOCVD growth of Hg(1-x)Cd (x)Te using a thermal pre-cracking technique.
We report the first epitaxial semiconductor-insulator-semiconductor (SIS) double heterostructures using III-V compound semiconductor InP.
