Recent development of epitaxial silicide technology has allowed structurally perfect metal-semiconductor interfaces to be fabricated.
Thin films of YBa sub 2 Cu sub 3 O sub (7-delta) grown on 001>- oriented SrTiO sub 3 substrates attain zero resistance at a temperature of T=92K and have a superconducting critical current, j su
Diffusion and interfacial segregation phenomena occurring in the Si amorphous-crystal system under MeV Ar ion irradiation are reviewed.
The use of epitaxial structures for the generation, detection, and modulation of modulation of light has had as its strongest driving force the development of fiber optic communications systems.
The need for low-resistance, shallow contacts in Si-based microelectronic devices has driven the search for fabrication techniques of epitaxial silicides which are compatible with the manufacturing
Epitaxial YSi sub (2-x) films have been fabricated.
Consider a signal composed of a train of overlapping wavelets.* The wavelets may, for one reason or another, arrive at the receiver (or measuring apparatus) delayed by different amounts of time.
The cure kinetics of a bisphenol epoxy system commonly used in optical fiber assembly and passive component has been analyzed by using a modulated dual scanning calorimeter (MDSC) under isothermal
Optical elements are bonded to the planar housing with adhesive materials for applications in a non-hermetic package of integrated passive optical devices.
Microelectronic devices are routinely encapsulated with epoxy molding compounds for environmental protection.
