Photoelectrochemical etching of InP is used to etch deep (80microns) narrow (20microns) grooves.
We have investigated the regrowth of InP by gas source molecular beam epitaxy on patterned substrates with different V-grooved channels.
It is known that the RCA Standard Clean 1, which is used repeatedly during device fabrication, can cause etching of Si.
The proliferation of advanced portable technology places substantial demands on current patterning techniques to satisfy future device and data needs.
This application allows manufacturers of telecommunication equipment to bring innovative network functionaliy earlier to the market than with the established technologies.
Implementation of 100Mb/s Ethernet in FPGA. First part is description of RMII interface. Then simple receiver and transmitter is provided.
Label space consumption has been studied in label-based forwarding architectures such as multi-protocol label switching (MPLS) to reduce forwarding table sizes and lookup complexity, to simplify ne
Ethernet becomes the predominant layer 2 technology in metropolitan area networks (MAN) and starts challenging multi-protocol label switching (MPLS) as the convergence layer for core networks in co
A massive traffic increase is foreseen in the near future in mobile networks.
There aren't many people today who worry that the telephone operator is listening in on their phone conversations. And this is as it should be - because they DON'T listen in.
