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We report the measurement of intervalley scattering rates for optically excited carriers in GaAs.

We report luminescence measurements in GaAs with femtosecond time resolution.

We report compression of the pulses from a synchronously pumped Rh 6G dye laser to 60 fs using a fiber-prism compressor. Average power in excess of 150 mW has been obtained.

A number of techniques have been developed for amplification of optical pulses of approximately 100 fs duration.

We report the first observation of femtosecond photon echoes from the band to band transitions in a bulk semiconductor.

We report studies of second-harmonic generation (SHG) of femtosecond pulses in long periodically poled lithium niobate waveguides under large conversion conditions.

The femtosecond dynamics and the coherence properties of resonant secondary emission (RSE) from quantum wells is a subject of considerable current interest.

Two-photon photocurrent imaging is used to nondestructively study the current apertures of VCSELs created by ion implantation.

Sharp, near band gap lines are observed in the reflection and photoluminescence spectra of GaAs/AlGaAs structures consisting of a modulation doped quantum well (MDQW) that contains a high density t

We present experimental results on the tunneling into the edge of a two-dimensional electron gas (2DEG) obtained with a GaAs/AlGaAs cleaved edge overgrown structure. While the 2DEG exhibits.

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