Publications

Future mobile radio systems, like 5G, are setting extremely demanding targets with respect to the number of served users, data rates, and latency etc.

This paper reports room temperature hot carrier aging measurements under dc stress of LDD n-channel MOSFETs used in the 1.0micron CMOS technology being manufactured for VLSI custom logic, static RA

This paper presents an analysis of hot carrier effects in submicron MOSFETs featuring both lightly-doped (LDD) and conventional source/drain junctions.

The hot-carrier induced drift is an important wear-out mechanism in IC's.

The integral charge-control model (ICM) provides an elegant and compact description of the one-dimensional transport physics of transistors by relating collector current to the junction voltages an

This article reviews hot carrier effects in quasi-2D polar semiconductors (quantum wells and heterostructures), with special emphasis on the GaAs/AlGaAs system.

Fine line NMOS FETs exhibit excess channel thermal noise. This excess noise increases with increase in drain to source voltage and decreases in channel length.

We studied a memory effect due to the real-space hot-electron transfer between two conducting GaAs layers separated by a graded AlGaAs barrier.

We have determined the hot carrier energy loss rate to the lattice by measuring the cooling curve of a photoexcited hot plasma in In(0.53)Ga(0.47)As.

The transport properties of non-equilibrium electrons in GaAs Hot Electron Transistors has been successfully probed using Hot Electron Spectroscopy, and explained in terms of a fully coupled electr