We report on the performance of a 38 GHz Quaternary phase shift keyed (QPSK) modulator/demodulator at information rates up to 8 Gbit/s.
GaAs-AlGaAs quantum-well (850 nm) vertical-cavity surface-emitting lasers, with lateral current injection and shallow implanted apertures, show small signal modulation bandwidths of at least 11 GHz
We have implemented a monolithic electronic 50 Gb/s 4:1 MUX core in an InP-based HBT technology.
The invention of permalloy and its application to submarine cables have led to the installation of transoceanic cables of many times the traffic-carrying capacity of the former non-loaded cables.
We develop a gain-switched quantum cascade (QC) laser to generate pulses with less than 200 ps duration at 8 μm gain switching is a simple technique for the generation of picosecond light pulses fr
We report on a simple technique for the generation of short pulses of midinfrared (5 and 8 mu m) radiation, based on gain-switched quantum cascade lasers.
We report the millimeter-wave performance of enhancement mode InP metal-insulator-semiconductor field-effect transistors grown by chloride vapor phase epitaxy.
A new technology for opto-electronics has been developed, semiconductor Multiple Quantum Wells (MQWs).
We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) c
We review recent developments of novel hybrid photonic-integrated modulators consisting of III-V devices and silica-on-silicon planar lightwave circuits.
