The integral charge-control model (ICM) provides an elegant and compact description of the one-dimensional transport physics of transistors by relating collector current to the junction voltages an
This article reviews hot carrier effects in quasi-2D polar semiconductors (quantum wells and heterostructures), with special emphasis on the GaAs/AlGaAs system.
Fine line NMOS FETs exhibit excess channel thermal noise. This excess noise increases with increase in drain to source voltage and decreases in channel length.
We studied a memory effect due to the real-space hot-electron transfer between two conducting GaAs layers separated by a graded AlGaAs barrier.
We have determined the hot carrier energy loss rate to the lattice by measuring the cooling curve of a photoexcited hot plasma in In(0.53)Ga(0.47)As.
The transport properties of non-equilibrium electrons in GaAs Hot Electron Transistors has been successfully probed using Hot Electron Spectroscopy, and explained in terms of a fully coupled electr
The epitaxial growth of AlSb/InAs/GaSb double heterostructure on GaSb substrate by molecular beam epitaxy is described.
Fundamental Deviations from Ohm's Law 2. E. J. Ryder's Experimental Results 3. Theory of Deviations From Ohm's Law a. Electrons in «-Type Germanium b. The Phonons c. T h e Selection Rules d.
We have investigated electric field heating of high mobility electrons in modulation-doped GaAs-Al GaAs heterostructures by simultaneous measurement of luminescence and mobility.
We have directly measured the carrier temperature in semiconductor optical amplifiers (SOAs) via spontaneous emission and we demonstrate an unexpectedly high carrier temperature.
