Publications

Displaying 16781 - 16790 of 37748

In-Network Quality Optimization for Adaptive Video Streaming Services

HTTP adaptive streaming (HAS) services allow the quality of streaming video to be automatically adapted by the client application in face of network and device dynamics.

In-Phase/Quadrature Modulation by Directly Reflectivity Modulated Laser

We report a directly reflectivity modulated laser that generates a 50-Gbaud QPSK signal with a BER of 2.2×10?5.

In-plane anisotropic strain in a-ZnO films grown on r-sapphire substrates

We deposited (11 (2) over bar0) nonpolar a-plane ZnO (a-ZnO) films on (01 (1) over bar2) r-sapphire substrates using metalorganic chemical vapor deposition.

In-plane Littrow lasing of broad photonic crystal waveguides

Broad photonic crystal waveguides forming open resonators are shown to support an hitherto unnoticed lasing pattern.

In-service measurements of polarization-mode dispersion and correlation to bit-error rate

We introduce a nondisruptive in situ polarization-mode dispersion measurement technique using the sidebands of working channels and show that it compares favorably with the standard Mueller matrix

In-Service Monitoring of PON Access Networks With Powerline Independent Devices

In this paper we describe and demonstrate a new remote in-service monitoring technique for passive optical access networks.

In-Service Pre-Ranging for Upstream ONU Activation in Low-Latency TDM-PON Using Downstream Data Only

We demonstrate an upstream-traffic-interruption-free ranging method for low-latency TDM-PON, which measures relative delay of a copropagating strobe to the downstream signal to derive appropriate O

In-Situ As and B Doping of Si and Si-Ge Epitaxial Films Grown by Rapid Thermal Chemical Vapor Deposition

Rapid thermal chemical vapor deposition (RTCVD) is a film growth technique that combines rapid thermal heating lamps with a chemical vapor deposition chamber.

In-situ Determination of Growth Rate by Pyrometric Interferometry during Molecular Beam Epitaxy: Application to the growth of AlGaN/GaN Quantum Wells

In this article, we report on the application of pyrimetric interferometry (PI) to monitor the growth rate of (Al)GaN in-situ during molecular beam epitaxy.

In-Situ Epitaxial Growth of Y sub 1 Ba sub 2 Cu sub 3 O sub 7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source

We report in-situ low temperature (550-600C) growth of Y sub 1 Ba sub 2 Cu sub 3 O sub 7-x films using a combination of MBE and a reactive oxygen source generated from a microwave discharge in a fl