In this paper we describe and demonstrate a new remote in-service monitoring technique for passive optical access networks.
We demonstrate an upstream-traffic-interruption-free ranging method for low-latency TDM-PON, which measures relative delay of a copropagating strobe to the downstream signal to derive appropriate O
Rapid thermal chemical vapor deposition (RTCVD) is a film growth technique that combines rapid thermal heating lamps with a chemical vapor deposition chamber.
In this article, we report on the application of pyrimetric interferometry (PI) to monitor the growth rate of (Al)GaN in-situ during molecular beam epitaxy.
We report in-situ low temperature (550-600C) growth of Y sub 1 Ba sub 2 Cu sub 3 O sub 7-x films using a combination of MBE and a reactive oxygen source generated from a microwave discharge in a fl
We have used a native oxide layer present on the surface of III-V compounds as an etch mask for transferring small features onto the underlying heterostructure.
High quality, superconducting Y sub 1 Ba sub 2 Cu sub 3 O sub (7-x) thin films have been successfully produced by molecular beam epitaxy on MgO(100) at a substrate temperature ~650C.
The aim of the present work is the characterization of materials in-situ by using a modified Near-Field Scanning Optical Microscope (NSOM) with a home-built tuning fork head that is used to obtain
Molecular beam epitaxy (MBE) is used for the deposition and growth of thin single-crystal metal films on silicon. Such systems have unique scientific and practical interest.
We describe in-situ electron microscope observations of the motion of misfit dislocations in Ge sub (0.3) Si sub (0.7) /Si (100) heterostructures.
