Plan-view high energy electron diffraction and imaging is shown to be very suitable for the study of ordered monolayers.
The epitaxial metallic silicides NiSi sub 2 and CoSi sub 2 on Si present films and interfaces of the highest crystalline quality with unique physical properties.
In contrast to the knowledge base that has been acquired for Al interconnects over the past 30 years, the investigations of electromigration in Cu damascene interconnects are still relatively new.
The transmission electron microscope (TEM) offers several unique features in surface science and thin film growth: strong, kinematical diffraction and imaging from monolayers and penetration to pe
The authors report the growth and fabrication of 4.5 mu m quantum cascade lasers based on strain balanced In0.68Ga0.32As/Al0.64In0.36As heterostructures by molecilar beam e. pitaxy.
We report the growth and fabrication of 4.5mm quantum cascade lasers based on strain balanced In0.68Ga0.32As/Al0.64In0.36As heterostructures by solid phosphorus molecular beam epitaxy.
In this article, we investigate the effect of a rapid thermal annealing (RTA) on electrical properties InAIN/GaN MOSHEMT with Al2O3 insulating film.
A triple-junction cell based on a lattice constant of 5.816 Å using InAlAs - InGaAsP - InGaAs alloys can theoretically outperform those based on the GaAs lattice parameter by 3%.
From the first developments of Nitride technologies using AlGaN/GaN heterostructures for designing high power, high frequency HEMT devices, we now assist to the emergence of new declination with In
InAlN/GaN is indeed an alternative to the common AlGaN/GaN heterostructure in electronics and sensing.
