Using several deriatives of scanning force microscopy with conducting tips, we find direct evidence for impurity band conduction in GaN films near the sapphire substrate interface.
The platinum-impurity diffusion in icosahedral Al(86)Mn(14) produced by melt-spinning has been measured for the first time.
Using a two-photon laser scanning microscope, the spectral and intensity variations of photoluminescence (PL) in a lateral epitaxial overgrown GaN film were mapped with submicron resolution.
Impurity effects on charge ordering (CO) as well as magnetic ground states in perovskite-type manganites are investigated.
934 TIIE BELL SYSTEM TECHNICAL JOURNAL, JULY 19G0 INITIAL ^-SEMICONDUCTOR 'Jr SURFACE INITIAL DOPING LEVEL REDISTRIBUTED IMPURITY REACTED SEMICONDUCTOR PILE-UP- k i - G R O W N FILM DEPLETION k>
We have observed an amorphous to polycrystalline silicon transformation with concomitant In redistribution in In implanted silicon at temperatures well below those at which solid phase epitaxial g
The dual implantation method developed for defect engineering [O.W. Holland et al, J. Electron.
The IP multimedia subsystem (IMS) is a network functional architecture that is seen as a promising solution for facilitating multimedia service creation and deployment, as well as supporting intero
The authors have created several services that blend telephony and digital TV service components. The paper presents the major challenges faced by the authors as they built these services.
IMS is a standard architectural framework which is used for the purpose of delivering multimedia communications services such as voice, video and text messaging over IP networks.
