Organometallic vapor phase epitaxy (OMVPE) of semiconductor materials has become an important tool for the production of high quality epitaxial films.
Understanding the mechanical properties of materials is crucial for their reliable application as bulk materials as well as in a miniaturized form.
In situ transmission electron microscopy experiments on electromigration in Al(0.5%Cu)/TiN interconnects show that the TiN barrier layer improves reliability not only by acting as a shunting layer,
We have found that in situ superconducting Y-Ba-Cu oxide thin films can be produced by sputtering without the aid of any external O sub 2 source during deposition.
We have found that in situ superconducting Y-Ba-Cu-O thin films can be produced by sputtering without the aid of any external O sub 2 source during deposition.
Surface and sub-surface damage is widely recognized as a deleterious side effect of plasma processing.
The heat evolution of stress-induced structural disorder, DeltaH(s)(t), in a Zr55Al10Ni5Cu30 glassy alloy during creep deformation under a constant load at the glass transition region (T-g = 680 K)
Plasma processing is used routinely to modify surfaces; for example in etching, deposition, and passivation.
Combination of electron-spin resonance and electrochemical voltammetric measurements reveals a behavior, unique among known conducting polymers, for thin, electrochemically deposited films of poly(
We report on the use of a commercially available spectral reflectance (SR) unit and its application to grating overgrowth on a Rotating Disk Reactor (RDR).
