During the last six years there has been much research on inelastic light scattering by quasi 2D electron systems in quantum wells and heterostructures.
We report observations of collective gap excitations of the fractional quantum Hall (FQH) states at filling factors nu = p/(2p + 1) (p = integer), for 1/3 less than or equal to nu less than or equa
The low-dimensional electron systems that reside in artificial semiconductor heterostructures of great perfection are a contemporary materials base for explorations of collective phenomena.
We report low temperature inelastic light scattering obtained with photon energies in resonance with the fundamental absorption edge of modulation doped GaAs-(Al0.3Ga0.7)As multiple quantum wells.
The inelastic light scattering method has been used extensively to study collective excitations of low dimensional electron systems in semiconductor quantum structures.
We review recent resonant inelastic light scattering research carried out in modulation doped GaAs-(AlGa)As quantum well heterostructures.
The magnetic properties of the 2DES close to nu = 1 are studied by the direct measurement of the low-lying spin excitation spectrum by inelastic light scattering at sub-Kelvin temperatures.
We have measured the ground heavy-hole to first excited heavy- hole valence intersubband transition in GaAs-AlGaAs multiple quantum wells using resonant inelastic light scattering.
Inelastic neutron scattering measurements have been performed on Ag2S in both the cubic superionic phase (T>450K) and the monoclinic low ionic conductivity phase (T450K).
The dynamics of the decagonal AlNiCo phase has been investigated on a single-grain quasicrystalline sample using inelastic neutron scattering.
