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In this article, we investigate the effect of a rapid thermal annealing (RTA) on electrical properties InAIN/GaN MOSHEMT with Al2O3 insulating film.
A triple-junction cell based on a lattice constant of 5.816 Å using InAlAs - InGaAsP - InGaAs alloys can theoretically outperform those based on the GaAs lattice parameter by 3%.
From the first developments of Nitride technologies using AlGaN/GaN heterostructures for designing high power, high frequency HEMT devices, we now assist to the emergence of new declination with In
InAlN/GaN is indeed an alternative to the common AlGaN/GaN heterostructure in electronics and sensing.
In the undirected Edge-Disjoint Paths problem with Congestion (EDPwC), we are given an undirected graph with V nodes, a set of terminal pairs and an integer c.
The advantages and drawbacks of the different semiconductor materials which can be used for the fabrication of quantum cascade laser (QCL) emitting in the 3-4 mu m wavelength range bring us to prop
This paper summarizes recent advances on InAs/InP mode-locked quantum dashes lasers operating in the 1.5 µm wavelength range.
We demonstrate the potential of InAs/InP quantum dash-based phase modulator for broadband (â«70 nm) applications at 1.55 μm.
Material growth optimization of InAs/InP quantum dashes has allowed the achievement of single section mode-locked lasers with improved performance in terms of modal gain >; 40 cm-1, average outp
