Publications

We review recent resonant inelastic light scattering research carried out in modulation doped GaAs-(AlGa)As quantum well heterostructures.

The magnetic properties of the 2DES close to nu = 1 are studied by the direct measurement of the low-lying spin excitation spectrum by inelastic light scattering at sub-Kelvin temperatures.

We have measured the ground heavy-hole to first excited heavy- hole valence intersubband transition in GaAs-AlGaAs multiple quantum wells using resonant inelastic light scattering.

Inelastic neutron scattering measurements have been performed on Ag2S in both the cubic superionic phase (T>450K) and the monoclinic low ionic conductivity phase (T450K).

The dynamics of the decagonal AlNiCo phase has been investigated on a single-grain quasicrystalline sample using inelastic neutron scattering.

The pair breaking effect of inelastic scattering of electrons off boson fluctuations is examined for anisotropic isotropic superconductors.

We calculate the contribution of polar optic phonons to the inelastic scattering rate for an electron traversing semiconductor heterojunctions.

The electronic structure of Mott insulators continues to be a major unsolved problem in physics despite more than a half-century of intense research efforts.

The electronic structure of Mott insulators continues to be a major unsolved problem in physics despite more than half-century of intense research efforts.

In 2015, the International Electronics Manufacturing Initiative (iNEMI) initiated the Bismuth-Tin (Bi-Sn) based Low-Temperature Soldering Process and Reliability (LTSPR) Project.