Free carriers in semiconductor heterojunctions and quantum wells induce fundamental changes in the optical properties.
This paper presents a general description of resonant inelastic light scattering as a spectroscopic method that determines the energies and wavevectors of the elementary excitations of free carrie
The conduction band offset in GaAs-Al(x)Ga(1-x)As quantum wells is determined with a new light scattering method. A value of DeltaE(C)/DeltaE(g) = Q(e) = 0.69 is found for x= 0.06.
We have recently introduced a light scattering method for the determination of band offsets in semiconductor quantum wells.
This memorandum is a condensed version of an invited talk at the XVI International Conference on Phenomena in Ionized Gases, Dusseldorf, Germany, August 29 to September 2, 1983.
Raman scattering has been performed on GaSb/AlSb strained- layer superlattices with periods varying from 65 to 300angstroms.
Raman spectra reveal spin fluctuation scattering over the ND sub 2 CuO sub 4 and Sm sub 2 CuO sub 4 (T' phase).
We report the observation of electronic light scattering in photoexcited parabolic GaAs-Al sub (x) Ga sub (1-x) As quantum wells.
The light scattering characteristics in heavy-metal fluoride glasses were measured directly for the first time in the infrared spectral region of interest for ultra-low loss optical fiber applicat
Resonant inelastic light scattering experiments access the low lying excitations of electron liquids in the fractional quantum Hall regime in the range 2/5 >= nu >= 1/3.
