Publications

X-ray absorption measurements from relatively high concentrations of Er (>0.1 at percent) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length.

X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. percent) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length.

Raman scattering was used to probe the effect of tin atom substitution for germanium in GeSe sub (2.5) homogeneous glasses.

The local structure of S implanted in GaAs has been determined by Extended X-ray Absorption Fine Structure (EXAFS) measured by monitoring the S(K(a)) Fluorescence Yield.

Local structures of (Ge-4/Si-4)(5) monolayer strained-layer supperlattice (MSLS) have been studied by fluorescence XAFS.

Recent studies have shown a number of surprising vortex dynamics phenomena which include: low frequency noise, slow voltage oscillations, history dependent dynamic response, memory of the direction

We explore the connections between compositional reasoning for networks of processes and local symmetry.

Aluminum L sub (2,3) soft x-ray emission (SXE) spectra measured for Al sub x Ga sub (1-x) As in the range (00.8) show changes due to modifications of the s-like local density of states (DOS) as

We consider a variant of the entanglement of assistance, as independently introduced by D.P. DiVincenzo et al. (quart-ph/9803033) and O. Cohen (Phys. Rev. Lett. 80, 2493 (1998)).

This paper presents a short review of localisation in strongly interacting, high quality dilute 2D GaAs systems.