Single-electron capacitance spectroscopy precisely measures the energies required to add individual electrons to a quantum dot.
This work reports recent improvements in structural characterization by high resolution x-ray diffraction (HRXRD) performed on multiple quantum well (MQW) heterostructures grown on InP substrates.
We have measured the homogeneous linewidth gamma(h) and the diffusion constant D of resonantly excited excitons confined to GaAs layers 50 to 200A wide.
Multi-hop wireless networks using directional antennas are increasingly deployed for various applications such as wireless backhaul.
We have investigated the localized corrosion of sputter-deposited aluminum and Al-0.5% Cu thin film metallizations in dilute HF solutions and the inhibition of this corrosion by CO sub 2 bubbled th
It has been observed in the device development laboratories (5216 and 5211) that aluminum metallizations on integrated circuits are sometimes pitted at their edges after etching in ethylene-glycol/
In Part I, we reported the conditions under which aluminum metallizations on integrated circuits are susceptible to pitting corrosion at their edges following etching in ethylene-glycol/hydrofluori
Convergent beam electron diffraction (CBED) was used to measure localized lattice strains in damascene copper interconnects.
We have studied the optical properties of the quasi-two-dimensional ground state exciton in GaAs-AlGaAs quantum wells in transverse magnetic fields for which the cyclotron energy is comparable to t
The results of electron spin resonance (ESR), static magnetic susceptibility, and electronic transport measurements of heat-treated polyparaphenylene (PPP) at various temperatures T-HT are presente
