AT&T has developed a unique packaging technique for encapsulating and molding a hybrid integrated circuit using an epoxy-based material.
Hybrid integrated circuits are used extensively in AT&T's switching and transmission products to achieve high levels of integration and reliability, as well as to simplify assembly and testing
Hybrid integrated circuits are used extensively in AT&T's switching and transmission products to achieve high levels of integration and reliability, as well as to simplify assembly and testing
The molecular basis for the beta-relaxation in polysulfones has been established by deuterium NMR studies on specifically deuterated polysulfones.
Molecular beam epitaxial growth of InAsSb lattice-matched to GaSb is summarized in this report. High quality InAsSb is obtained with optimal flux ratios and stable substrate temperature.
The first molecular beam epitaxial growth of the II-V semiconducting compound Zn sub 3 As sub 2 and mixed crystals of chalcopyrite ZnGeAs sub 2 and Ge is reported.
We have succeeded in growing epitaxial layers and multilayer heterostructures of In(1-x)Ga(x)As(1-y)Sb(y) quarternary and InAs0.92Sb0.08 ternary alloys lattice-matched to GaSb by molecular beam epi
Molecular beam epitaxial growth of In(x)Ga(1-x)As(y)Sb(1-y) lattice- matched to (100) GaSb substrate with x up to 0.26 is reported.
We report the first molecular beam epitaxial growth of the II-V semiconducting compound Zn sub 3 As sub 2.
Molecular Beam Epitaxy (MBE) is a thin film crystal growth technique by a process involving the reaction of one or more thermal molecular beams with a crystalline substrate surface under ultra-high
