No abstract provided refer to folder released on 101985
This memo reviews the preparation of III-V compound semiconductors by molecular beam epitaxy (MBE).
Layered structures on an atomic scale have resulted in artificially structured materials having electrical and optical properties which do not exist in nature.
Single crystal type B CoSi sub 2 thin layers have been grown on Si(111) by co-deposition at room temperature.
High quality superlattice structures of GaN/AlGaN were grown on (0001) sapphire substrates by molecular beam epitaxy.
GaN/Al sub 0.15 Ga sub 0.85 N multiple quantum wells (MQWs) have been grown by plasma-assisted molecular beam epitaxy on R-plane (10 12) sapphire substrates.
High quality GaN/AlGaN multiple quantum wells were grown by molecular beam epitaxy on (0001) sapphire substrates.
GaN/Al0.15Ga0.85N multiple quantum wells (MQWs) have been grown by plasma-assisted molecular beam epitaxy on R-plane (10 12) sapphire substrates.
High-quality superlattice structures of GaN/AlGaN were grown on (0001) sapphire substrates by molecular beam epitaxy.
We report for the first time the growth of GaSb/AlSb multilayers and alloys on Si(100) by molecular beam epitaxy (MBE).
