Because the electroabsorption effect in semiconductor multiple quantum well material is approximately 50 times larger than that in bulk semiconductors, significant interest has been generated in th
We have achieved a high responsivity, R=1.9 A/W, 10microns infrared detector using intersubband absorption in GaAs/Al sub (x) Ga sub (1-x) As quantum well superlattices.
A new technology for opto-electronics has been developed, semiconductor MQWs.
A new technology for opto-electronics has been developed, semiconductor MQWs.
A new technology for opto-electronics has been developed, semiconductor MQWs.
In semiconductor quantum well structures (QWS) quantum size effects produces fundamental modifications of the optical and electronic properties.
This paper briefly reviews the nonlinear optical and electro- optical properties and applications of GaAs/AlGaAs multiple quantum wells, all of which are compatible with laser diodes and/or semicon
System demonstrations employing soliton transmission and/or optical time division multiplexing have emphasized the need for stable and reliable pulse sources with repetition rates in the 1 GHz to 1
We demonstrate a quantum confined Stark effect (QCSE) electroabsorption modulator consisting of quantum wells of AlGaAs and GaAs on an epitaxial multilayer dielectric mirror, all grown by molecular
Semiconductor multiple quantum wells (MQWs) have opto-electronic properties enhanced over bulk semiconductors.
