Publications

A new technology for opto-electronics has been developed, semiconductor MQWs.

A new technology for opto-electronics has been developed, semiconductor MQWs.

A new technology for opto-electronics has been developed, semiconductor MQWs.

In semiconductor quantum well structures (QWS) quantum size effects produces fundamental modifications of the optical and electronic properties.

This paper briefly reviews the nonlinear optical and electro- optical properties and applications of GaAs/AlGaAs multiple quantum wells, all of which are compatible with laser diodes and/or semicon

System demonstrations employing soliton transmission and/or optical time division multiplexing have emphasized the need for stable and reliable pulse sources with repetition rates in the 1 GHz to 1

We demonstrate a quantum confined Stark effect (QCSE) electroabsorption modulator consisting of quantum wells of AlGaAs and GaAs on an epitaxial multilayer dielectric mirror, all grown by molecular

Semiconductor multiple quantum wells (MQWs) have opto-electronic properties enhanced over bulk semiconductors.

The high demand for frequency resources due to the ever increasing number of devices in cellular networks requires new approaches that maximize the spectral efficiency.

We have detected a second high velocity bipolar flow in B335 located to the east of the core and its associated bipolar flow.