We observe the effect of negative absolute mobility for minority holes in n-modulation-doped GaAs quantum wells at low temperatures.
We report the observation of negative absolute mobility of electrons (i.e., a drift toward the negative electrode) in p-modulation doped GaAs quantum wells.
This paper investigates the performance of the UMTS frequency-division duplex (FDD) Random Access Channel (RACH).
We have measured the infrared photoconductivity of an alternatively doped multi-quantum well structure.
Intraconnects, as-grown single-walled carbon nanotubes bridging two metal electrodes, were investigated as gated structures.
We show that pairs of prisms can have negative group velocity dispersion in the absence of any negative material dispersion.
The insertion of lumped negative impedances at intervals along each conductor of a cable pair has long been of interest as a means of improving bilateral transmission.
The application of the telephone repeater, the development of which made countrywide telephone service practicable, had been confined largely to toll plant from the year 1915 when the transcontinen
H E N an e.m.f. is applied to the terminals of an ordinary positive resistance a current flows in at the terminal connected to the positive pole of the source and out at the other terminal.
We describe negative group index surface plasmons in nano-structured metallic gratings.
