Publications

By employing sensitive current measurements at low drain voltages for n-channel metal-oxide-semiconductor field effect transistors with different channel dopings, substrate current versus gate volt

It is shown that LO-phonon Raman scattering when the incident and scattered photon energies are both resonant with an exciton transition can be very intense.

It has been demonstrated experimentally that the rate of homogeneous upconversion in erbium-doped fibres increases with increasing pump and signal power, even if the same degree of excitation is ma

We propose a new type of current injection semiconductor laser with rare-earth dopant in the active layer for achieving stable single-longitudinal mode operation.

Coulomb exchange interactions of electrons in the nu = 3 quantum Hall state are determined from two inter-Landau-level spin-flip excitations measured by resonant inelastic light scattering.

We report the first observation of the fourth vibrational overtone (Delta vu=5) transition of molecular hydrogen in solid parahydrogen at 19062 cm (-1).

In d.c.

Mechanically exfoliated graphene mounted on a SiO(2)/Si substrate was subjected to HF/H(2)O etching or irradiation by energetic protons.

We report tunable harmonic mode-locking in CW optically injected InAs/InP quantum dash lasers emitting at 1.56m.

The high resolution Bitter pattern technique has been used to reveal the structure of the array of flux lines which is present when single crystal samples of the high T sub c superconductor YBa sub