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We have studied semi-insulating Fe:InP regrowth of etched mesa buried heterostructure lasers by hydride vapor phase epitaxy.

This is a discussion of the dependence of resonance energy transfer between a planar assembly of donors and an acceptor out of the donor plane, as a function of the principal orientations of the

High-resolution resonant polarized x-ray diffraction experiments near the sulfur K edge have been performed on free-standing liquid crystal films exhibiting the chiral smectic-C{*}(F12) phase.

This paper describes the oriented nucleation of calcite controlled by self-assembled monolayers (SAMs) of omega-terminated alkanethiols (HS(CH2)(n)X) supported on metal films, The effect of the che

Common user interfaces nowadays neither adapt to the specific user nor the task at hand.

Films of HgTe grown in the (100) orientation by molecular beam epitaxy typically possess better electrical properties than do (111) films.

The origin and dispersion of the anomalous disorder-induced Raman band (D band) observed in all sp(2) hybridized disordered carbon materials near 1350 cm(-1) is investigated as a function of incide

The physical origin of the excess capacitance at single crystal, epitaxial type-A and type-B NiSi sub 2 Schottky contacts has been identified.

In semiconductor quantum well structures (QWS) quantum size effects produces fundamental modifications of the optical and electronic properties.

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