Publications

Low temperature processing of integrated circuits is a critical goal as very large scale integration (VLSI) adopts sub-micron design rules.

We have developed a unique model compound probe of the metal/polyimide interface.

This paper presents the growth and characterization of three-dimensional structures using metal-organic (or organometallic) chemical precursors like M(CH3)(3), where M is a metal.

Owing to the high mobility and high vapor pressure of mercury, mercury-containing materials must be prepared at comparatively low temperatures.

As part of a program studying the use of organometallic precursors to prepare solid state materials, MnTe has been synthesized from triethylphosphine telluride (Et sub 3 PTe) and dimanganesedecacar

The need for development of improved growth processes and enhanced laboratory safety during organometallic vapor phase epitaxial (OMVPE) growth of semiconductors has resulted in extensive effort in

The potential applications of the II-VI semiconductors and their alloys have recenttly received renewed interest as a result of recen advances in growth technology such as Molecular Beam Epitaxy (M

Organosilicon polymers are playing an increasingly important role in the electronics industry.

Calcite crystals were nucleated from MgCl2/CaCl2 solutions onto functionalized self-assembled monolayers adsorbed onto E-beam evaporated Au films.

The width of tilted line patterns, such as are needed when drawing circular structures, is found to vary with the oblique angle when it falls into the sub-50-nm scale in Gaussian e-beam lithography