Dense large, grain ceramic samples of Ba sub 2 YCu sub 2 O sub x have been oxidized at 400 to 500C in 100 to 300 atm oxygen for 1 to 10 days.
Secondary ion mass spectroscopy (SIMS) and electrical measurements have been used to investigate the mechanism of copper transport in dielectric materials.
Rare-earth/transition-metal alloy thin films intended for use in magneto-optic memory applications are susceptible to degradation by a variety of mechanisms, among which corrosion by oxidation is p
The magnetic properties of amorphous iron-terbium alloy thin films, which are being investigated for use as high density mass memory storage media in magneto-optic devices, are degraded by exposure
Mixed organocuprates, RR'CuLi are oxidized by nitroarenes to a mixture of RR, RR', and R'R'.
Thin SiO sub 2 layers were exposed to an HBr/O sub 2 plasma for a variety of short periods, reproducing the over-etching process after polycrystalline Si gate electrodes have been etched and the ga
Two recent developments have stimulated an interest in the oxidation behavior of non-planar silicon surfaces. One is the evolution of VLSI technology toward three-dimensional fabrication.
The reflection-absorption spectrum of a saturation coverage of oxygen on Mo(100) at room temperature displays a weak and broad band centered around 780cm-1 and a stronger and sharper band at 1015cm
Cava, et al., have recently reported and subramanian, et al., confirmed a new family of high-T sub c oxide superconductors (T sub c ~ 70K) having the general formula Pb sub 2 Sr sub 2 Ln sub (1-x)
Cava, et al., have recently reported and subramanian, et al., confirmed a new family of high-T sub c oxide superconductors (T sub c ~ 70K) having the general formula Pb sub 2 Sr sub 2 Ln sub (1-x)
