In this paper the successful integration of alternating aperture phase-shift lithography methodology into a 0.12 μm random-logic CMOS process flow is discussed.
By changing the gate voltage of a single QW channel FET of InGaAs, we can vary the density of carriers n in this channel, originating from modulation doping of one of the InAlAs barriers.
We studied the phase stability of Pb(AxBy)03 compositions containing a combination of pentavalent cation and divalent or trivalent cations.
PbTiO sub 3 phase stability and crystal growth were investigated under hydrothermal conditions near 500C.
The thermal expansion of the low temperature alpha-phase and the phase transformation to the enantiotropic polymorphic β- phase at 403 K in diindenoperylene (DIP) has been studied in the temperatur
Transparent sols and gels in the ZrO sub 2-SiO sub 2 system containing up to 60 mole % zirconia were prepared using tetraethyl orthosilicate (TEDS) and zirconium-n-propoxide (ZNP) in the presence o
A new nonlinear-optic crystal has been grown and characterized.
9-Hydroxyphenalenone, a molecule with a strong intramolecular 0-H...0 bond, is disordered at room temperature, becoming ordered below the reversible first order phase transition at 255K.
A mean-field model of a Heisenberg spin glass with weak random anisotropy is solved.
Phase transitions have been found in ten new nonlinear optic materials by calorimetry and dielectric permittivity measurement: Sr sub 5 Ti sub 3 F sub (19) at 755K, Sr sub 5 V sub 3 F sub (19) at 7
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