This is a book chapter for "Heterojunctions: Band Discontinuities and Device Applications" edited by G. Margaritondo and F. Capasso.
This article reviews recent advances in our current level of understanding of the physics underlying transport and optical properties of Ge(x)Si(1-x)/Si strained layer heterostructures.
The early transition elements (groups IV, V, and VI) form dichalcogenides (S, Se) with two dimensional layer structures. The layers are held together only by weak vanderWaal's interactions.
Recent advances in the synthesis of superconducting cuprates, such as Ba sub 2 YCu sub 3 O sub 7, have profound scientific and technological implications which have only begun to be explored.
This review explores the relationship between physics and communications over the past 125 years.
Telecommunications networks are rapidly advancing beyond a billion bits per sec (GB/sec) today with the real possibility of terabits/sec on major trunk optical fibers at the beginning of the next c
This book is entirely my own work. It has taken ten years from its inception to get the book to its present state. Its evolution is described in the Preface.
A wide variety of structures can be fabricated using electron, x-ray or ion beam lithography. These structures allow physics experiments that are truly unique.
This talk will provide an overview of novel physics that has emerged from artificially structured semiconductor material.
We examine recent advances in femtosecond optical pulse technology with an emphasis on the physics of the processes which have enabled us to generate pulses as short as 6 fs, or only 3 cycles of th
